Recently, ASIC Center of Southeast University and Yulin Technology jointly published a paper by the name of  Physics Based SPICE Modeling of Dynamic On-state Resistance of p-GaN HEMTs on IEEE Trans. on Power Electronics Letters (IEEE TPEL).

   This letter introduces a new physics based SPICE modeling method for the dynamic on-state resistance (Ron,dy) of gallium nitride based p-type gate power high electron mobility transistors   (p-GaN   HEMTs).   To   describe   the   continuous variations of Ron,dy,  a time-resolved electron  mobility variation (Δμeff)   model   is   proposed.   Physical   parameters   including activation energy and voltage acceleration factor of traps in p-GaN HEMTs are extracted as the model parameters. Then, to achieve the   goal   of  simulating  Ron,dy,   the  proposed   Δμeff    model   is incorporated into the surface potential based advanced SPICE model for GaN HEMT (ASM-HEMT). Simulative results prove the proposed models can predict the Ron,dy induced power loss.

Please click the following link to access the full text.

Physics_Based_SPICE_Modeling_of_Dynamic_On-state_Resistance_of_p-GaN_HEMTs.pdf

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